DMN2170U
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
G
C
Z
G
3.4
0.7
X
Y
C
0.9
1.4
2.0
X
E
E
0.9
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN2170U
Document number: DS31182 Rev. 4 - 2
4 of 4
www.diodes.com
June 2008
? Diodes Incorporated
相关PDF资料
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相关代理商/技术参数
DMN21D2UFB-7B 功能描述:MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2215UDM 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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DMN2230U 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2230U-7 功能描述:MOSFET 600mW 20Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2250UFB-7B 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSF N CH 20V 1.35A X1DFN10063 制造商:Diodes Incorporated 功能描述:MOSFET N-channel 20V 1.35A DFN1006-3
DMN2300U 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV
DMN2300U-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V SOT23,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube